| PART |
Description |
Maker |
| CM600HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Powerex, Inc.
|
| CR03AM |
LOW POWER USE NON-INSULATED TYPE/ GLASS PASSIVATION TYPE
LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Semiconductor
|
| CR05AS |
LOW POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BCR16A BCR16B BCR16C BCR16E |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE A, B, C : NON-INSULATED TYPE E : INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| BCR3AM |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE 低功率的用途非绝缘型，平面型钝
|
Mitsubishi Electric, Corp.
|
| BCR3AM |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CR3EM |
LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BCR3AS |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Semiconductor
|
| IRG7PH28UD1PBF IRG7PH28UD1MPBF IRG7PH28UD1PBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
Low switching losses
|
International Rectifier
|
| RM150DZ-24 RM150DZ-2H RM150DZ-H RM150DZ-M RM150UZ- |
HIGH POWER GENERAL USE INSULATED TYPE
HIGH POWER GENERAL USE INSULATED TYPE 大功率常规使用绝缘型
BATTERY SLA 12V 7AH .250 TERM 大功率常规使用绝缘型
ADAPTOR 0.187 TO 0.250 TERMINAL 大功率常规使用绝缘型
Insert strip for laser printer, lettering field: 62 x 10 mm - ESL 62 X 10 大功率常规使用绝缘型
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Sem...
|
